Connecting Theory and Practice in Optoelectronics

Full Monte Carlo perspective on hot carrier effects in III-N LEDs

Figure_3_blogRoughly four years ago researchers at the École Polytechnique and UCSB reported that III-Nitride (III-N) LEDs exhibit hot carrier effects in a strong correlation with the efficiency droop. These new measurements added fuel to the already actively ongoing discussion in the III-N LED device simulation community about the development of more accurate simulation models than the presently used quasi-equilibrium models. In particular, the measurements and subsequent works suggested that hot electrons and holes created in the process of Auger recombination might even affect the operating voltage of LEDs. However, full LED device simulations have so far lacked detailed models of hot carrier effects and primarily relied on drift and diffusion currents of carriers within the Fermi-Dirac distribution. Read more of this post