NUSOD Blog

Connecting Theory and Practice in Optoelectronics

NUSOD 2016 Preview: GaAs-based dilute bismide semiconductor lasers – theory vs. experiment

GaBiAs_band_gapsTwo long sought-after goals for the semiconductor community have been (i) to develop long-wavelength semiconductor lasers on GaAs substrates, to enable exploitation of vertical-cavity architectures as well as monolithic integration with GaAs-based high-speed microelectronics, and (ii) to realise uncooled operation of semiconductor lasers, whereby the external cooling equipment typically required to maintain operational stability in long-wavelength devices can be removed in order to significantly reduce energy consumption without degrading the device performance.

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